Carrier system, exposure apparatus, carrier method, exposure method, device manufacturing method, and suction device

ABSTRACT

A carrier system is provided with a wafer stage which holds a mounted wafer and is also movable along an XY plane, a chuck unit which holds the wafer from above in a non-contact manner above a predetermined position and is vertically movable, and a plurality of vertical movement pins, which can support from below the wafer held by the chuck unit on the wafer stage when the wafer stage is positioned at the predetermined position above and can also move vertically. Then, flatness of the wafer is measured by a Z position detection system, and based on the measurement results, the chuck unit and the vertical movement pins that hold (support) the wafer are independently driven.

This is a divisional of U.S. patent application Ser. No. 14/648,280 (nowU.S. Pat. No. 9,821,469), which is the U.S. National Stage ofInternational Application No. PCT/JP2013/081852 filed Nov. 27, 2013,which claims the benefit of U.S. Provisional Application No. 61/731,892filed Nov. 30, 2012. The disclosure of each of the above-identifiedprior applications is hereby incorporated by reference in its entirety.

TECHNICAL FIELD

The present invention relates to carrier systems, exposure apparatuses,carrier methods, exposure methods, device manufacturing methods, andsuction devices, and more particularly to a carrier system which carriesa plate-like object, an exposure apparatus which is equipped with thecarrier system, a carrier method to carry a plate-like object onto amovable body, an exposure method using the carrier method, a devicemanufacturing method using the exposure apparatus or the exposuremethod, and a suction device which suctions the plate-like object.

BACKGROUND ART

Conventionally, in a lithography process to manufacture electronicdevices (microdevices) such as a semiconductor device (an integratedcircuit or the like) or a liquid crystal display device, mainly, aprojection exposure apparatus of a step-and-repeat method (a so-calledstepper), projection exposure apparatus of a step-and-scan method (aso-called scanning stepper (also called a scanner)) or the like ismainly used.

Substrates such as a wafer, a glass plate and the like subject toexposure that are used in these types of exposure apparatuses aregradually becoming larger (for example, in the case of a wafer, in everyten years). Although a 300-mm wafer which has a diameter of 300 mm iscurrently the mainstream, the coming of age of a 450 mm wafer which hasa diameter of 450 mm looms near. When the transition to 450 mm wafersoccurs, the number of dies (chips) output from a single wafer becomesdouble or more than the number of chips from the current 300 mm wafer,which contributes to reducing the cost.

However, because the thickness does not necessarily increase inproportion to the size of the wafer, the 450 mm wafer is weak inintensity and rigidity when compared with the 300 mm wafer. Therefore,when focusing on a point such as a carriage of a wafer, it wasconsidered that there was a risk of warping occurring in the wafer,which may negatively affect the exposure accuracy when a means methodsimilar to the current 300 mm wafer was employed. Accordingly, as thecarrier method of the wafer, a proposal is made of a carrier method(carry-in) or the like that can be employed even when the wafer is a 450mm wafer in which the wafer is suctioned from above in a non-contactmanner by a carrier member equipped with a Bernoulli chuck or the liketo maintain the flatness degree (flatness) and performs carriage to awafer holder (holding device) (for example, refer to PTL 1).

However, in the case of employing suction in a non-contact manner fromabove by the carrier member described above as a carrier method of thewafer onto the wafer stage (wafer holder), there was a risk ofpositional deviation (rotation deviation) in a horizontal plane of thewafer being generated at an unacceptable level, to which correctionbased on measurement results was difficult to perform.

CITATION LIST Patent Literature

[PTL 1] U.S. Patent Application Publication No. 2010/0297562

SUMMARY OF INVENTION Solution to Problem

As a method for resolving the inconvenience due to suction in anon-contact manner from above by the wafer carrier member describedabove, a method can be considered in which while a wafer is suctioned ina non-contact manner suction from above by a suction member such as aBernoulli chuck or the like, the wafer is also supported from below by asupport member (for example, vertical-motion pins on a wafer stage).However, according to results of experiments and the like of theinventors, in the case of performing loading of the wafer onto the waferstage in a non-contact suction from above the wafer and support frombelow, it became clear that warping that is not acceptable could occureven in the case of a 300 mm wafer due to a difference in drivingvelocity between the suction member and the support member on theloading.

According to a first aspect of the present invention, there is provideda carrier system in which a plate-like object is carried to an objectmounting member where an object mounting section is provided, the systemcomprising: a suction member which has an opposing section opposed tothe object, the suction member forming a gas flow between the opposingsection and the object to generate a suction force with respect to theobject; a measurement device which obtains information related to ashape of the object suctioned by the suction member; a driver whichmakes the suction member relatively move in a vertical direction in anapproaching or separating manner with respect to the object mountingsection; and a controller which controls at least one of the suctionmember and the driver so that the object is mounted on the objectmounting section in a predetermined shape, using the informationobtained by the measurement device.

According to this system, the object can be carried onto the objectmounting member, in a state maintaining high flatness.

According to a second aspect of the present invention, there is providedan exposure apparatus which forms a pattern on an object, the apparatuscomprising: the carrier system described above; and a pattern generatingdevice which exposes the object carried onto the object mounting memberby the carrier system with an energy beam so as to form the pattern.

According to a third aspect of the present invention, there is provideda device manufacturing method, comprising: exposing an object using theexposure apparatus described above; and developing the object which hasbeen exposed.

According to a fourth aspect of the present invention, there is provideda carrier method in which a plate-like object is carried to an objectmounting member, the method comprising: suctioning the object from abovein a non-contact manner at an area above the object mounting member by asuction member; making the suction member relatively move in a verticaldirection with respect to the object mounting section by a driver;obtaining information related to a position in the vertical directionfor each of a plurality of places of the object suctioned by the suctionmember; and controlling at least one of the suction member and thedriver so that the object is mounted on the object mounting section in apredetermined shape, using the information obtained.

According to this method, the object can be carried onto the objectmounting member, in a state maintaining high flatness.

According to a fifth aspect of the present invention, there is providedan exposure method, comprising: carrying the object which is plate-likeonto the object mounting member by the carrier method described above;and forming a pattern on the object by exposing the object held by theobject mounting member with an energy beam after carriage.

According to a sixth aspect of the present invention, there is provideda device manufacturing method, comprising: exposing an object using theexposure method described above; and developing the object which gasbeen exposed.

According to a seventh aspect of the present invention, there isprovided a first suction device which suctions a plate-like object, thedevice comprising: a suction member having an opposing section whichopposes the object, the suction member generating a suction force withrespect to the object by blowing out gas from the opposing section; anda measurement device which obtains information related to a shape of theobject suctioned by the suction member.

According to an eighth aspect of the present invention, there isprovided a second suction device which makes a suction force act on aplate-like object in a non-contact manner, the device comprising: a basemember; a plurality of suction sections provided at the base member,each section generating a flow of a gas in the periphery of the objectso as to generate a suction force with respect to the object; and anadjustment device which deforms the object, wherein the object isdeformed by the adjustment device, while the object is being suctionedby the force generated by the flow of the gas which the plurality ofsuction sections generated.

According to this device, it becomes possible to deform the object bythe adjustment device, for example, so as to secure a desired level offlatness, while the object is being suctioned by the suction forcegenerated by the flow of gas generated by the plurality of suctionsections.

BRIEF DESCRIPTION OF DRAWINGS

FIG. 1 is a view schematically showing a structure of an exposureapparatus according to an embodiment.

FIG. 2A is a view (planar view) of a wafer stage in FIG. 1 when viewedfrom a +Z direction, and FIG. 2B is a view (front view) of the waferstage when viewed from a −Y direction.

FIG. 3 is a view showing a placement of an interferometer, an alignmentsystem, a multi-point AF system and the like that the exposure apparatusis equipped with, with a projection optical system serving as areference.

FIG. 4 is a view (front view) of a carry-in unit and the wafer stage inFIG. 1 when viewed from the −Y direction.

FIG. 5 is a view of a chuck unit in FIG. 4 when viewed from a −Zdirection.

FIG. 6 is a block diagram showing an input/output relation of a maincontroller which mainly structures a control system of the exposureapparatus according to the embodiment.

FIG. 7A is a view (No. 1) used to explain a carry-in operation of awafer, FIG. 7B is a view (No. 2) used to explain a carry-in operation ofa wafer, FIG. 7C is a view (No. 3) used to explain a carry-in operationof a wafer, and FIG. 7D is a view (No. 4) used to explain a carry-inoperation of a wafer.

FIG. 8A is a view (No. 5) used to explain a carry-in operation of awafer, FIG. 8B is a view (No. 6) used to explain a carry-in operation ofa wafer, FIG. 8C is a view (No. 7) used to explain a carry-in operationof a wafer, and FIG. 8D is a view (No. 8) used to explain a carry-inoperation of a wafer.

FIG. 9A is a view (No. 9) used to explain a carry-in operation of awafer, and FIG. 9B is a view (No. 10) used to explain a carry-inoperation of a wafer.

FIG. 10 is a view used to explain an example (a modified example) of astructure of a wafer flatness detection system and a chuck unit positiondetection system.

FIG. 11 is a view used to explain an example of an operation immediatelybefore the wafer is mounted on the wafer stage, of the wafer carry-inoperation.

DESCRIPTION OF EMBODIMENTS

An embodiment will be described below, based on FIGS. 1 to 9B.

FIG. 1 schematically shows a structure of an exposure apparatus 100according to an embodiment. This exposure apparatus 100 is a projectionexposure apparatus of a step and-scan method, or a so-called scanner. Asit will be described later on a projection optical system PL is arrangedin the present embodiment, and in the description below, a directionparallel to an optical axis AX of this projection optical system PL willbe described as a Z-axis direction, a direction within a planeorthogonal to the Z-axis direction in which a reticle and a wafer arerelatively scanned will be described as the Y-axis direction, adirection orthogonal to the Z-axis and the Y-axis will be described asan X-axis direction, and rotational (inclination) direction around theX-axis, the Y-axis, and the Z-axis win be described as a θx direction, aθy direction, and θz direction.

Exposure apparatus 100, as is shown in FIG. 1, is equipped with anexposure section 200 placed at an exposure station placed near the +Yside end on a base board 12, a measurement section 300 placed at ameasurement station a predetermined distance apart to the −Y side fromexposure section 200, a stage device 50 including a wafer stage WST anda measurement stage MST that move two-dimensionally in an XY planeindependently on base board 12, a carry-in unit 121 which structures acarry carrier system 120 (refer to FIG. 6) that carries a wafer W alongwith a carry-out unit which is not shown and a wafer support member 125which will be described later on, and a control system or the like ofthese parts. Here, base board 12 is supported almost horizontally(parallel to the XY plane) on a floor surface by an anti-vibrationdevice (omitted in drawings). Base board 12 consists of a member havinga plate-like outer shape. Further, inside base board 12, a coil unitincluding a plurality of coils 17 placed in a matrix share with an XYtwo-dimensional direction serving as a row direction and a columndirection is housed, which structures a stator of a planar motor (to bedescribed later on). Incidentally, in FIG. 1, wafer stage WST ispositioned at exposure station, and wafer W is held on wafer stage WST(to be more specific, on wafer table WTB which will be described lateron). Further measurement stage MST is positioned near the exposurestation.

Exposure section 200 is equipped with an illumination system 10, areticle stage RST, a projection unit PU, a local liquid immersion device8 and the like.

Illumination system 10, as is disclosed in, for example, U.S. PatentApplication Publication No. 2003/0025890 and the like, includes a lightsource, an illuminance equalizing optical system including an opticalintegrator and the like, and an illumination optical system that has areticle blind and the like (none of which are shown). Illuminationsystem 10 illuminates a slit-shaped illumination area IAR set (limited)on reticle R by the reticle blind (also called a masking system) by anillumination light (exposure light) IL, with a substantially uniformilluminance. In this case, as illumination light IL, for example, an ArFexcimer laser beam (wavelength 193 nm) is used.

On reticle stage RST, reticle R on which a circuit pattern or the likeis formed on its pattern surface the lower surface in FIG. 1) is fixed,for example, by vacuum chucking, Reticle stage RST, for example, isfinely drivable within the XY plane by a reticle stage driving system 11(not shown in FIG. 1, refer to FIG. 6) including a linear motor, aplanar motor or the like, and is also drivable in a scanning direction(the Y-axis direction which is the lateral direction of the page surfacein FIG. 1) at a predetermined scanning speed.

Position information (including rotation information in the θzdirection) of reticle stage RST in the XY plane is constantly detected,for example, by a reticle laser interferometer (hereinafter, referred toas a “reticle interferometer”) 13, a movable mirror 15 (actually, a Ymovable mirror (or a retroreflector) having a reflection surfaceorthogonal to the Y-axis direction and an X movable mirror having areflection surface orthogonal to the X-axis direction are provided)fixed to reticle stage RST, at resolution of, for example, around 0.25nm. Measurement values of reticle interferometer 13 are sent to a maincontroller 20 (not shown in FIG. 1, refer to FIG. 6). Main controller 20drives reticle stage RST via reticle stage driving system 11 (refer toFIG. 6), based on the position information of reticle stage RST.Incidentally, in the present embodiment, position information of reticlestage RST in the XY plane can be detected using an encoder, instead ofthe reticle interferometer described above.

Projection unit PU is placed below reticle stage RST in FIG. 1.Projection unit PU is supported by a mainframe BD, via a flange sectionFLG provided at an outer circumference section of mainframe BD, which isplaced horizontally above base board 12. Mainframe BD, as is shown inFIGS. 1 and 3, consists of a plate member having a hexagonal shape (ashape in which two corners of a rectangular shape is cut off) in aplanar view whose dimension in the Y-axis direction is larger than thatof the X-axis direction, and is supported on the floor surface by asupport member which is not shown including an anti-vibration devicewhich is not shown in a part thereof. As is shown in FIGS. 1 and 3, aframe FL having a rectangular frame shape in a planar view is placedsurrounding mainframe BD. Frame FL is supported at a position the sameheight as mainframe BD on the floor surface by a support memberdifferent from the support member supporting mainframe BD. From an endnear (a Y position almost the same as a loading position LP which willbe described later on) the −Y side of a pair of long sides apart in theX-axis direction of frame FL, a pair of (symmetrical) extended sections159 that each have an L-shaped XZ section is provided in a protrudingmanner below (refer to FIG. 4).

Projection unit PU includes a barrel 40, and projection optical systemPL held inside barrel 40. Used as projection optical system PL, forexample, is a dioptric system consisting of a plurality of opticalelements (lens elements) arranged along optical axis AX, which isparallel to the Z-axis. Projection optical system PL, for example, isdouble telecentric, and has a predetermined projection magnification(for example, ¼ times, ⅕ times or ⅛ times). Therefore, when illuminationarea IAR on reticle R is illuminated by illumination light IL fromillumination system 10, a reduced image of the circuit pattern ofreticle R (a reduced image of a part of the circuit pattern) withinillumination area IAR is formed in an area (hereinafter, also called anexposure area) IA conjugate to illumination area IAR on wafer W whosesurface is coated with a resist (sensitive agent) and is placed on asecond surface (image plane) side of projection optical system PL, viaprojection optical system PL (projection unit PU), by illumination lightIL having passed through reticle R placed so that its pattern surfacesubstantially coincides with a first surface (object plane) ofprojection optical system PL. And, by reticle stage RST and wafer stageWST (to be more precise, fine movement stage WFS to be described lateron which holds wafer W) being synchronously driven, scanning exposure ofa shot area (divided area) on wafer W is performed, by reticle R beingrelatively moved in the scanning direction (Y-axis direction) withrespect to illumination area IAR (illumination light IL) and wafer Wbeing relatively moved in the scanning direction (Y-axis direction) withrespect to exposure area IA (illumination light IL), and the pattern ofreticle R is transferred onto the shot area. That is, in the presentembodiment, the pattern of reticle R is generated on wafer W byillumination system 10 and projection optical system PL, and by theexposure of the sensitive layer (resist layer) on wafer W withillumination light IL the pattern is formed on wafer W.

Local liquid immersion device 8 is provided, corresponding to exposureapparatus 100 which performs exposure using a liquid immersion method.Local liquid immersion device 8 includes a liquid supply device 5, aliquid recovery device 6 (none of which are shown in FIG. 1, refer toFIG. 6), nozzle unit 32 and the like. Nozzle unit 32, as is shown inFIG. 1, is supported in a suspended manner by mainframe BD supportingprojection unit PU and the like, via a support member which is not shownsurrounding the lower end periphery of barrel 40 which holds an opticalelement closest to the image plane side (wafer W side) structuringprojection optical system PL, in this case, a lens (hereinafter alsoreferred to as a “tip lens”) 191. Nozzle unit 32 is equipped with asupply port and a recovery port of liquid Lq, a lower surface at whichthe recovery port is provided and to which wafer W is placed oppositely,a supply passage connected to a liquid supply pipe 31A (not shown inFIG. 1, refer to FIG. 3), and a recovery passage connected to a liquidrecovery pipe 31B (not shown in FIG. 1, refer to FIG. 3). To liquidsupply pipe 31A, connected is one end of a supply pipe which is notshown that has the other end connected to liquid supply device 5 (notshown in FIG. 1, refer to FIG. 6) and to liquid recovery pipe 31B,connected is one end of a recovery pipe which is not shown that has theother end connected to liquid recovery device 6 (not shown in FIG. 1,refer to FIG. 6). In the present embodiment, main controller 20 controlsliquid supply device 5 (refer to FIG. 6), so that liquid suppliedbetween tip lens 191 and wafer W via liquid supply pipe 31A and nozzleunit 32, and also controls liquid recovery device 6 (refer to FIG. 6) sothat liquid is recovered from between tip lens 191 and wafer W vianozzle unit 32 and liquid recovery pipe 31B. On this operation, maincontroller 20 controls liquid supply device 5 and liquid recovery device6 so that the amount of liquid supplied and the amount of liquidrecovered are constantly equal. Accordingly, between tip lens 191 andwafer W, a fixed amount of liquid Lq (refer to FIG. 1) is heldconstantly replaced. In the present embodiment, as liquid Lq describedabove, pure water is used through which an ArF excimer laser light(light with a wavelength of 193 nm) transmits. Incidentally, refractiveindex n of the pure water to the ArF excimer laser light is almost 1.44,and in the pure water, the wavelength of illumination light IL isshortened to 193 nm×1/n=around 134 nm. Incidentally, in FIG. 3, a liquidimmersion area formed by liquid Lq is shown by a reference sign 36.

Further, in the case measurement stage MST is positioned belowprojection unit PU, liquid Lq can be filled in between a measurementtable MTB to be described later and tip lens 191 in a manner similar tothe description above.

Here, although the description goes out of sequence, stage device 50will now be described. Stage device 50, as is shown in FIG. 1, isequipped with wafer stage WST and measurement stage MST placed on baseboard 12, an interferometer system 70 (refer to FIG. 6) including Yinterferometers 16 and 19 that measure position information of thesestages WST and MST, and the like.

Wafer stage WST, as it can be seen from FIGS. 1, 2B and the like, has acoarse movement stage WCS, and a fine movement stage WFS, which issupported a non-contact state by coarse movement stage and is relativelymovable with respect to coarse movement stage WCS. Here, wafer stage WST(coarse movement stage WCS) is driven in predetermined strokes in theX-axis direction and the Y-axis direction, and is also finely driven inthe θz direction by a coarse movement stage driving system 51A (refer toFIG. 6). Further, fine movement stage WFS is driven in directions of sixdegrees of freedom (the X-axis direction, the Y-axis direction, theZ-axis direction, the θx direction, the θy direction and the θzdirection) by a fine movement stage driving system 52A (refer to FIG.6), with respect to coarse movement stage WCS.

Coarse movement stage WCS, as is shown in FIG. 2B, is equipped with acoarse movement slider section 91 having a rectangular plate-like shapewhose length in the X-axis direction is slightly longer than the lengthin the Y-axis direction in a planar view (when viewed from the +Zdirection), a pair of side wall sections 92 a, 92 b, each having arectangular plate-like shape with the longitudinal direction being theY-axis direction, and being fixed on the upper surface of one end andthe other end of coarse movement slider section 91 in the longitudinaldirection in a state parallel to the YZ plane, and a pair of statorsections 93 a, 93 b fixed on the upper surface of side wall sections 92a, 92 b, respectively, at the center in the Y-axis direction facing theinner side. Incidentally, side wall sections 92 a, 92 b can have almostthe same length in the Y-axis direction as stator sections 93 a, 93 b.That is, side wall sections 92 a, 92 b may be provided only at thecenter in the Y-axis direction on the upper surface of coarse movementslider section 91, at one end and the other end in the longitudinaldirection.

At the bottom surface of coarse movement stage WCS, that is, at the bbase board 12 is provided, consisting of a plurality of permanentmagnets 18 placed in the shape of a matrix with the XY two-dimensionaldirections serving as a row direction and the column direction, as isshown in FIG. 2B. The magnet unit, along with the coil unit of baseboard 12, structures coarse movement stage driving system 51A (refer toFIG. 6) consisting of a planar motor of an electromagnetic force(Lorentz force) driving method whose details are disclosed, for example,in U.S. Pat. No. 5,196,745 and the like. The magnitude and direction ofthe electric current supplied to each coil 17 (refer to FIG. 1)structuring the coil unit are controlled by main controller 20.

At the bottom surface of coarse movement slider section 91, a pluralityof air bearings 94 is fixed around the magnet unit described above.Coarse movement stage WCS is supported by levitation by the plurality ofair bearings 94, via a predetermined gap (clearance, gap) above baseboard 12, such as for example, a gap of about several μm, and is drivenin the X-axis direction, the Y-axis direction and the θz direction bycoarse movement stage driving system 51A.

Incidentally, coarse movement stage driving system 51A is not limited tothe planar motor of the electromagnetic force (Lorentz force) drivingmethod, and for example, a planar motor of a variable magneto-resistancedriving method can also be used. Other than this, coarse movement stagedriving system 51A can be structured by a magnetic levitation typeplanar motor, and the planar motor can driving coarse movement stageottom surface of coarse movement slider section 91, a magnet unitcorresponding to the coil unit placed inside

WCS in directions of six degrees of freedom. In this case, the airbearings will not have to be arranged at the bottom surface of coarsemovement slider section 91.

Each of the pair of stator sections 93 a, 93 b, for example, consists ofa member having an outer shape that is a rectangular plate shape, andinside each member, coil units CUa, CUb consisting of a plurality ofcoils are housed. The magnitude and direction of the electric currentsupplied to each coil structuring coil units CUa, CUb is controlled bymain controller 20.

Fine movement stage WFS, as is shown in FIG. 2B, for example, isequipped with a main section 81 consisting of a low-height columnarmember having an octagonal shape in a planar view, a pair of moversections 82 a, 82 b each fixed to one end and the other end in theX-axis direction of a main section 81, and a wafer table WTB consistingof a rectangular plate-shaped member when viewed from above, which isintegrally fixed to the upper surface of main section 81.

Main section 81 is preferably made of a material having a thermalexpansion coefficient is the same or around the same level as that ofwafer table WTB, and the material is preferably a material having a lowthermal expansion coefficient.

Here, although it is omitted in the drawing in FIG. 2B, at main section81, a plurality of (for example, three) vertical-motion pins 140 (referto FIG. 4) being vertically movable is provided, which are inserted intothrough holes which are not shown formed in wafer table WTB (and in awafer holder which is not shown). At the upper surface of each of thethree vertical-motion pins 140, an exhaust opening (not shown) is formedfor vacuum exhaust. Further, each of the three vertical-motion pins 140has the lower end surface fixed to the upper surface of a platformmember 141. Each of the three vertical-motion pins 140 is placed at aposition which is almost the vertex of an equilateral triangle in aplanar view on the upper surface of platform member 141. The exhaustopenings formed at each of the three vertical-motion pins 140communicates with a vacuum pump (not shown), via an exhaust pipelineformed inside vertical-motion pin 140 (and platform member 141) and avacuum exhaust piping which is not shown. Platform member 141 isconnected to a driver 142, via a shaft 143 fixed at the center of thelower surface. That is, the three vertical-motion pins 140 are driven inthe vertical direction by driver 142, integrally with platform member141. In the present embodiment, platform member 141, the threevertical-motion pins 140 and shaft 143 structure a wafer centersupporting member (hereinafter shortened to a center supporting member)150, which can support from below a part of a center section area of thewafer lower surface. Here, displacement in the Z-axis direction from areference position of the three vertical-motion pins 140 (centersupporting member 150) is detected by a displacement sensor 145 (notshown in FIG. 4, refer to FIG. 6), such as, for example, the encodersystem provided at driver 142. Main controller 20, based on measurementvalues of displacement sensor 145, drives the three vertical-motion pins140 (center supporting member 150) in the vertical direction via driver142.

Referring back to FIG. 2B, each of pair of mover sections 82 a, 82 b hasa housing whose YZ section is a rectangular frame shape, which is fixed,respectively, to a surface at one end and a surface at the other end inthe X-axis direction of main section 81. Hereinafter, for the sake ofconvenience, the housings will be described as housings 82 a, 82 b usingthe same reference signs as mover sections 82 a, 82 b.

Housing 82 a has an opening section formed whose YZ section is arectangular shape elongate in the Y-axis direction, with the Y-axisdirection dimension (length) and the Z-axis direction dimension (height)both slightly longer than stator section 93 a. In the opening section ofhousings 82 a, 82 b, the end on the −X side of stator section 93 a ofcoarse movement stage WCS is inserted in a non-contact manner. Inside anupper wall section 82 a ₁ and a bottom wall section 82 a ₂ of housing 82a, magnet units MUa₁, MUa₂ are provided.

Mover section 82 b is structured in a similar manner, although thestructure is symmetrical to mover section 82 a. In the hollow section ofhousing (mover section) 82 b, the end on the +X side of stator section93 b of coarse movement stage WCS is inserted in a non-contact manner.Inside an upper wall section 82 b ₁ and bottom wall section 82 b ₂ ofhousing 82 b, magnet units MUb₁, MUb₂ are provided, which are structuredsimilarly to magnet units MUa₁, MUa₂.

Coil units CUa, CUb described above are housed, respectively, insidestator sections 93 a and 93 b so that the units face magnet units MUa₁MUa₂ and magnet units MUb₁, MUb₂.

The structure of magnet units MUa₁, MUa₂ and magnet units MUb₁, MUb₂,and coil units CUa, CUb, is disclosed in detail, for example, in U.S.Patent Application Publication No. 2010/0073652, U.S. Patent ApplicationPublication No. 2010/0073653 and the like.

In the present embodiment, fine movement stage driving system 52A (referto FIG. 6) in which fine movement stage WFS is supported by levitationin a non-contact state with respect to coarse movement stage WCS and isalso driven in a non-contact manner in directions of six degrees offreedom is structured similarly to the U.S. Patent ApplicationPublication No. 2010/0073652 and the U.S. Patent Application PublicationNo. 2010/0073653 described above, including the pair of magnet unitsMUa₁, MUa₂ that mover section 82 a previously described has and coilunit CUa that stator section 93 a has, and the pair of magnet unitsMUb₁, MUb₂ that mover section 82 b has and coil unit CUb that statorsection 93 b has.

Incidentally, in the case of using the magnetic levitation type planarmotor as coarse movement stage driving system 51A (refer to FIG. 6),because fine movement stage WFS can be finely driven in the Z-axisdirection, the θx direction and the θy direction integrally with coarsemovement stage WCS by the planar motor, fine movement stage drivingsystem 52A can be structured so that fine movement stage WFS is drivablein the X-axis direction, the Y-axis direction and the θz direction, orthat is, in directions of three degrees of freedom in the XY plane.Other than this, for example, to each of the pair of side wall sections92 a, 92 b of coarse movement stage WCS, a pair of electromagnets eachcan be provided facing the oblique side of the octagonal shape of finemovement stage WFS, and facing each electromagnet a magnetic body membercan be provided at fine movement stage WFS. With this arrangement, sincefine movement stage WFS can be driven in the XY plane by the magneticforce of the electromagnet, this allows a pair of Y-axis linear motorsto be structured by mover sections 82 a, 82 b and stator sections 93 a,93 b.

In the center on the upper surface of wafer table WTB, wafer W is fixedby vacuum suction or the like, via a wafer holder provided at a holdsection of the wafer such as a pin chuck which is not shown or the like.While the wafer holder may be formed integral with wafer table WTB, inpresent embodiment, the wafer holder and wafer table WTB are structuredseparately, and the wafer holder is fixed in a recess section of wafertable WTB, for example, by vacuum chucking or the like. Further, on theupper surface of wafer table WTB, as is shown in FIG. 2A, a plate(liquid-repellent plate) 28 is provided that has a surface(liquid-repellent surface), substantially flush to the surface of thewafer mounted on the wafer holder, to which liquid-repellent processingwith respect to liquid Lq is applied, also has a rectangular outer shape(contour) with a circular opening one-size larger than the wafer holder(mounting area of the wafer) formed in the center section. Plate 28consists of a material having a low thermal expansion coefficient, suchas for example, glass or ceramics (for example, Zerodur (brand name) ofSchott Corporation, Al₂O₃, TiC or the like), and to its surface,liquid-repellent processing with respect to liquid Lq is applied. To bemore specific, the liquid-repellent film is formed, for example, by afluorine-based resin material such as fluororesin material,polytetrafluoroethylene (Teflon (registered trademark)), anacrylic-based resin material, a silicon-based resin material, or thelike. Incidentally, plate 28 is fixed to the upper surface of wafertable WTB, so that the entire (or a part of the) surface is flush withthe surface of wafer W.

Near the end on the +Y side of plate 28, a measurement plate 30 isprovided. At this measurement plate 30, a first fiducial mark FM isprovided in the center positioned on a center line CL of wafer tableWTB, and a pair or second reference marks RM used for reticle alignmentis provided with the first fiducial mark FM arranged in between.

On wafer table WTB, as is shown in FIG. 2A, a plurality of (for example,three) reflection mirrors 86 are provided near the wafer holder. Thethree reflection mirrors 86 are placed so that one is placed at aposition near the −Y side of the wafer holder (a position where a notchof wafer faces, coinciding on center line CL, that is, a position in asix o'clock direction with respect to the center of wafer W in a planarview), and one each is placed symmetrical to center line CL, in a fiveo'clock direction and in a seven o'clock direction with respect to thecenter of wafer W in a planar view. Incidentally, in FIG. 2A, for thesake of convenience in the drawings, while reflection mirrors 86 areillustrated on the outer side of the circular opening of the waferplate, the mirrors are actually placed at a border section of thecircular opening of plate 28 and the wafer holder, within the gapbetween plate 28 and wafer W. Below these reflection mirrors 86, aporous body is provided, and liquid Lq remaining on wafer table WTB thatcould not be recovered by liquid recovery device 6 is recovered, via theporous body.

To each of the −Y end surface and the −X end surface of wafer table WTB,mirror polishing is applied, and a reflection surface 17 a and areflection surface 17 b are formed, as is shown in FIG. 2A.

Measurement stage MST, as is shown in FIG. 3, is equipped with a stagemain section 60, and measurement table MTB mounted on stage main section60.

At the bottom surface of stage main section 60, although it is notshown, a magnet unit consisting of a plurality of permanent magnets isprovided, which structures a measurement stage driving system 51B (referto FIG. 6) consisting of a planar motor that employs an electromagneticforce (Lorentz force) driving method, along with the coil unit (coil 17)of base board 12. At the bottom surface of stage main section 60, aplurality of air bearings (not shown) is fixed, in the periphery of themagnet unit. Measurement stage MST, by the air bearings previouslydescribed, is supported in a levitated manner above base board 12 via apredetermined clearance gap (gap, clearance), such as for example, aclearance gap of around several μm, and is driven in the X-axisdirection and the Y-axis direction by measurement stage driving system51B. Incidentally, measurement stage MST can be structured, having acoarse movement stage driven in directions of three degrees of freedomin the XY plane, and a fine movement stage driven in the remaining threedegrees of freedom with respect to the coarse movement stage (or in sixdegrees of freedom). Incidentally, in the case measurement stage drivingsystem 51B is structured using the magnetic levitation type planarmotor, for example, the measurement stage can be a single stage which ismovable in directions of six degrees of freedom.

Measurement table MTB consists of a member having a rectangular shape ina planar view. At measurement table MTB, various kinds of measurementmembers are provided. As such measurement members, for example, anilluminance irregularity sensor 88 having a pin-hole shaped lightreceiving section which receives illumination light IL on the imageplane of projection optical system PL, an aerial image measuringinstrument 96 which measures light intensity of an aerial imageprojection image) of a pattern projected by projection optical systemPL, and a wavefront aberration measuring instrument 89 are employed. Asthe illuminance irregularity sensor, a sensor having a structure similarto the one disclosed in, for example, U.S. Pat. No. 4,465,368 and thelike can be used. Further, as the aerial image measuring instrument, aninstrument having a structure similar to the one disclosed in, forexample, U.S. Patent Application Publication No. 2002/0041377 and thelike can be used. Further, as the wavefront aberration measuringinstrument, an instrument having a structure similar to the onedisclosed in, for example, PCT International Publication No. 03/065428(corresponding U.S. Pat. No. 7,230,682) and the like can be used.Incidentally, adding to each sensor described above, an illuminancemonitor can be employed having a light receiving section of apredetermined area which receives illumination light IL on the imageplane of projection optical system PL, whose details are disclosed in,for example, U.S. Patent Application Publication No. 2002/0061469 andthe like.

Incidentally, in the present embodiment, the surface of measurementtable MTB (the measurement members previously described can be included)is also covered with a liquid-repellent film (water-repellent film).

Mirror polishing is applied to each of the +Y side surface and the −Xsurface of measurement table MTB, and a reflection surface 95 a and areflection surface 95 b is formed similar to wafer table WTB describedabove.

Next interferometer system 70 which measures position information ofwafer stage WST and measurement stage MST will be described.

Interferometer system 70 (refer to FIG. 6) includes a plurality ofinterferometers that measure position information of wafer stage WST(wafer table WTB) or measurement stage MST (measurement table MTB), orto be more specific, two Y interferometers 16 and 19, and four Xinterferometers 136, 137, 138 and 139 and the like. In the presentembodiment, as each interferometer described above, a multi-axisinterferometer having a plurality measurement axes is used except for apart of the interferometers.

Y interferometer 16, as is shown in FIGS. 1 and 3, irradiatesmeasurement beams B4 ₁ and B4 ₂ on reflection surface 17 a of wafertable WTB, along measurement axes in the Y-axis direction which areapart by the same distance to the −X side and the +X side from astraight line (hereinafter, called a reference axis) LV (refer to FIG.3) parallel to the Y-axis that passes through a projection center(optical AX, refer to FIG. 1) of projection optical system PL, andreceives the reflected lights. Further, Y interferometer 16 irradiates ameasurement beam B3 toward reflection surface 17 a, along a measurementaxis (for example, a measurement axis on reference axis LV) which isparallel to the Y-axis and is between measurement beams B4 ₁ and B4 ₂with a predetermined spacing in the Z-axis direction, and receivesmeasurement beam B3 reflected off reflection surface 17 a.

Y interferometer 19 irradiates two measurement beams B2 ₁ and B2 ₂, forexample, along measurement axes in the Y-axis direction which are thesame distance to the −X side and the +X side from reference axis LV, onreflection surface 95 a of measurement table MTB, and receives each ofthe reflected lights.

X interferometer 136, as is shown in FIG. 3, irradiates measurementbeams B5 ₁ and B5 ₂ along two measurement axes which are the samedistance apart with respect to a straight line (reference axis) LH inthe X-axis direction and passes the optical axis of projection opticalsystem PL, on reflection surface 17 b of wafer table WTB, and receiveseach of the reflected lights.

X interferometer 137, as is shown in FIG. 3, irradiates a measurementbeam B6 along a straight line LA, which passes through a detectioncenter of a primary alignment system AL1 to be described later and isparallel to the X-axis, on reflection surface 17 b of wafer table WTB,and receives the reflected light.

X interferometer 138 irradiates a measurement beam B7 along a straightline LUL, which passes through loading position LP where loading of thewafer is performed and is parallel to the X-axis on reflection surface17 b of wafer table WTB, and receives the reflected light.

X interferometer 139 irradiates a measurement beam parallel to theX-axis with respect to reflection surface 95 b, and receives thereflected light.

Measurement values (measurement results on position information) of eachinterferometer of interferometer system 70 are supplied to maincontroller 20 (refer to FIG. 6). Main controller 20 obtains positioninformation related to the Y-axis direction, θx direction and the θzdirection of wafer table WTB, based on the measurement values of Yinterferometer 16. Further, main controller 20 obtains positioninformation related to the X-axis direction of wafer table WTB, based onthe output of X interferometers 136, and either 137 or 138.Incidentally, main controller 20 can obtain the position informationrelated to the θz direction of wafer table WTB, based on the measurementvalues of X interferometer 136.

Further, main controller 20 obtains position information related to theX-axis direction, the Y-axis direction, and the θz direction ofmeasurement table MTB (measurement stage MST), based on measurementvalues of Y interferometer 19 and X interferometer 139.

Other than these sections, interferometer system 70 is equipped with a Zinterferometer system, in which a pair of Z interferometers thatirradiate a pair of measurement beams set apart in the Z-axis directionand parallel to the Y-axis on a pair of fixed mirrors, via a verticalpair of reflection surfaces of a movable mirror fixed to a side surfaceon the −Y side of coarse movement stage WCS, and receive return lightsfrom the pair of fixed mirrors via the reflection surfaces, is placedaway from reference axis LV by the same distance to the −X side and tothe +X side. Based on measurement values of the Z interferometer system,main controller 20 obtains position information of wafer stage WSTrelated to directions of at least three degrees of freedom including,the Z-axis direction, the θy direction and the θz direction.

Incidentally, a detailed structure and an example of details of ameasurement method for interferometer system 70 are disclosed in detail,for example, in U.S. Patent Application Publication No. 2008/0106722 andthe like.

While an interferometer system was used in the present embodiment tomeasure information related to the position of wafer stage WST ormeasurement stage MST, a different means can be used. For example, it isalso possible to use an encoder system such as the one described in U.S.Patent Application Publication No. 2010/0297562.

Referring back to FIG. 1, measurement section 300 is equipped with analignment system device 99 attached to a lower surface of mainframe BD,and other measurement systems.

Alignment system device 99 includes five alignment systems shown in FIG.3, AL1 and AL2 ₁ to AL2 ₄. To describe this in detail, primary alignmentsystem AL1 is placed in a state where its detection center is positionedpassing through the center of projection unit PU (optical axis AX ofprojection optical system PL, also coincides with the center of exposurearea IA previously described in the present embodiment) and on referenceaxis, at a position apart by a predetermined distance to the −Y sidefrom optical axis AX. On one side and the other side in the X-axisdirection with primary alignment system AL1 in between, secondaryalignment systems AL2 ₁,AL2 ₂ and AL2 ₃,AL2 ₄ are provided,respectively, with the detection centers placed almost symmetrically toreference axis LV. That is, the five alignment systems AL1 and AL2 ₁ toAL2 ₄ are placed, with their detection centers arranged along the X-axisdirection. Incidentally, in FIG. 1, the systems are shown as alignmentsystem device 99, including the five alignment systems AL1 and AL2 ₁ toAL2 ₄ and the holding devices that hold these systems.

As each of the five alignment systems AL1 and AL2 ₁ to AL2 ₄, forexample, an FIA (Field Image Alignment) system of an image processingmethod is used, in which a broadband detection beam that does notsensitize the resist on the wafer is irradiated on a subject mark, animage of the subject mark formed on the light-receiving plane by areflected light from the subject mark and an image of an index (an indexpattern on an index plate provided in each alignment system) which isnot shown are formed using an image-forming element (CCD or the like),99 is disclosed in, for example, U.S. Patent Application Publication No.2009/0233234.

Carry-in unit 121 (refer to FIG. 1) structuring a part of carrier system120 is a unit for holding the wafer before exposure above loadingposition LP prior to the loading onto wafer table WTB, and for loadingthe wafer onto wafer table WTB. Further, the carry-out unit which is notshown is a unit for unloading the wafer after exposure from wafer tableWTB.

Carry-in unit 121, as is shown in FIGS. 3 and 4, has a chuck unit 153consisting of a circular plate-like member in a planar view (when viewedfrom above) that suctions wafer W from above in a non-contact manner, aplurality of, for example, a pair of Z voice coil motors 144 whichdrives chuck unit 153 in a vertical direction, a plurality of, forexample, a pair of weight-cancelling devices 131 which supports theself-weight of chuck unit 153, a pair of wafer support members 125 whichsupports from below wafer W suctioned by chuck unit 153, and the like.

Chuck unit 153 as is shown in FIG. 4, is equipped with, for example, aplate member (plate) 44 of a predetermined thickness having a circularshape in a planar view, and a plurality of chuck members 124 embedded atpredetermined places at the lower surface of plate member 44. Here,inside of plate member 44, piping and the like are provided, and by aliquid adjusted to a predetermined temperature flowing in the piping,the plate member also serves to function as a and imaging signals areoutput. The imaging signals from the five alignment systems AL1 and AL2₁ to AL2 ₄ are supplied to main controller 20 (refer to FIG. 6).Incidentally, a detailed structure of alignment system device

cooling plate to control the temperature of the wafer to a predeterminedtemperature. However, plate member 44 does not necessarily have tofunction as a cooling plate as well.

In the present embodiment, as is shown in FIG. 5 which is a planar viewof chuck unit 153 when viewed from the −Z direction, plate member 44 istwo members, a disc-shaped first member 44A and a concentric ring-shapedsecond member 44B placed on the outer side of the first member, that areintegrally structured. However, the two members do not necessarily haveto be placed concentrically. Further, the plate member does notnecessarily have to be structured by two members.

At the lower surface of the ember 44A, chuck member 124 is placed at aplurality of (for example, nineteen) points, at a point on its center(center point), and on points spaced equally apart on a virtual doubleconcentric circle with the point serving as the center. To describe thisin detail, on the virtual circle on the inner side, chuck member 124 isplaced at six points with the central angle thereof set to 60 degrees,and on the virtual circle on the outer side, chuck member 124 is placedspaced apart at twelve points with the central angle thereof set to 30degrees, the points including six points which are on straight linesjoined from the point at the center to the six points described above.The lower surface of each of the plurality of, or a total of nineteen,chuck members 124, is embedded into the lower surface of plate member 44(refer to FIG. 4), in a state flush with the lower surface of platemember 44. Incidentally, the placement of the chuck members is notlimited to this, and the chuck members do not necessarily have to beequally spaced.

Each chuck member 124 consists of a so-called Bernoulli chuck. Bernoullichuck, as is well known, is a chuck that uses the Bernoulli effect tolocally increase the flow velocity of fluid (for example, air) which isblowing out to suction the target object (hold in a non-contactmanner)). Here, the Bernoulli effect is an effect in which the pressureof fluid decreases when the flow velocity increases, and with theBernoulli chuck, the suction state (holding/floating state) is decidedby the weight of the target object subject to suction (hold, fix), andthe flow velocity of fluid blowing out from the chuck. That is, in thecase the size of the target object is known, the size of the gap betweenthe chuck and the target object subject to hold upon the suction isdecided, according to the flow velocity of the fluid blowing out fromthe chuck. In the present embodiment, chuck member 124 is used tosuction wafer W by blowing out gas from its gas flow hole (for example,a nozzle or a blowout port) or the like to generate a flow of gas (gasflow) in the periphery of wafer W. The degree of the force of suction(that is, the flow velocity and the like of the gas blowing out) isappropriately adjustable, and by holding wafer W by suction with chuckmember 124, movement in the Z-axis direction, the θx direction and theθy direction can be restricted.

With the plurality (nineteen) chuck members 124 at least one of flowvelocity, flow amount, and direction of blowout (blowout direction ofthe gas) or the like of the gas blowing out from each of the chuckmembers is controlled by main controller 20, via an adjustment device115 (refer to FIG. 6). This allows the suction force of each chuckmember 124 to be set individually to an arbitrary value. Incidentally,the plurality of (nineteen) chuck members 124 can be structured so thatthe suction can be set for each group decided in advance. Incidentally,main controller 20 can control the temperature of the gas.

In the first member 44A, as is shown in FIG. 5, a plurality of throughholes 152 having a small width (elongated) is formed, surrounding eachof the plurality of chuck members 124. To be more specific, a part ofthe plurality of through holes 152 is placed so as to structure eachside of a hexagon surrounding each of the seven chuck members 124 thatexclude the twelve chuck members 124 positioned at the outercircumference section. The remaining parts of through holes 152 areplaced surrounding half of the center section side of the twelve chuckmembers 124 positioned at the outer circumference section, along withsome of the part of the through holes 152. The fluid (for example, air)blown out toward wafer W from chuck members 124 when wafer W issuctioned with chuck members 124 in the manner described later on, isexhausted outside (above chuck unit 153) via through hole 152.

Near the inner circumference section of the second member 44B, pluralityof (for example, twelve) through holes 154 are formed on the outer sideof each of the twelve chuck members 124 positioned at the outercircumference section of the first member 44A. Inside each through hole154, a porous bearing 156 is provided consisting of a ceramic porousbody. A plurality of (for example, twelve) porous bearings 156 are eachconnected to a gas supply device 48 (refer to FIG. 6) consisting of, forexample, a compressor or the like via a piping (not shown). Upon suctionof wafer W to be described later on by chuck unit 153, gas (for example,pressurized air) supplied from gas supply device 48 blows out downward(toward wafer W) from each porous bearing 156 so as to prevent wafer Wfrom coming into contact with chuck unit 153. The pressure, flow amountand the like of gas supplied to each porous bearing 156 are controlledby main controller 20 (refer to FIG. 6). Incidentally, porous bearings156 do not have to be provided in chuck unit 153 in the case there is norisk of chuck unit 153 coming into contact with wafer W.

Here, the gas supplied to chuck member 124 is clean air (for example,compressed air), in which at least the temperature is adjusted to aconstant level, and dust, particles and the like are removed. That is,wafer W suctioned by chuck member 124 is maintained at a predeterminedtemperature by the compressed air whose temperature is controlled.Further, the temperature, the degree of cleanliness and the like of thespace where wafer stage WST and the like are placed can be maintained toa set range.

To both of the ends in the X axis direction on the upper surface ofchuck unit 153, one end of each of a pair of support plates 151extending in the X-axis direction within a horizontal plane (XY plane)is connected, as is shown in FIG. 4.

To the upper surface of each of the pair of extended sections 159 offrame FL previously described, as is shown in FIG. 4, Z voice coil motor144 and weight-cancelling device 131 are fixed lined in the X-axisdirection. In this case, while weight-cancelling device 131 is placed atthe inner side of Z voice coil motor 144, the arrangement is not limitedto this.

And, the other end of each of the pair of support plates 151 issupported from below by weight-cancelling device 131 and Z voice coilmotor 144, which are fixed to the upper surface of each of the pair ofextended sections 159.

Each of the pair of Z voice coil motors 144 drives chuck unit 153 in thevertical direction with predetermined strokes (in a range including afirst position where chuck unit 153 begins suction of wafer W, and asecond position where wafer W suctioned by chuck unit 153 is mounted onthe wafer holder wafer table WTB)). Each of the pair of Z voice coilmotors 144 is controlled by main controller 20 (refer to FIG. 6).

Each of the pair of weight-cancelling devices 131 is equipped with apiston member 133 a and a cylinder 133 b at which piston member 133 a isprovided freely slidable. The pressure of the space inside cylinder 113b, which is divided by the piston of piston member 133 a and cylinder133 b, is set to a value according to the self-weight of chuck unit 153.The upper end of the rod section of piston member 133 a is joined to thelower surface of support plate 151. Each of the pair ofweight-cancelling devices 131 is type of pneumatic spring device whichgives a force in an upward direction (+Z direction) to support plate 151via piston member 133 a, and this force allows the pair ofweight-cancelling devices 131 to support all or a part of theself-weight of chuck unit 153 (and support plate 151). The pressure,amount and the like of the pressurized gas supplied to the inside ofcylinder 133 b of weight-cancelling device 131 are controlled by maincontroller 20 (refer to FIG. 6). Here, because weight-cancelling device131 is equipped with piston member 133 a which moves in the verticaldirection along cylinder 133 b, weight-cancelling device 131 alsofunctions as a guide upon vertical movement of chuck unit 153 a.

Each of the pair of wafer support members 125 is equipped with avertical movement rotation driving sect ion 127 attached integrally viaa coupling member which is not shown to each of the pair of extendedsections 159 of frame FL, a drive shaft 126 which is driven in theZ-axis direction (vertical direction) and the θz direction by verticalmovement rotation driving section 127, and a support plate 128, whichhas one end of its upper surface in the longitudinal direction fixed tothe lower end surface of drive shaft 126, extending in an uniaxialdirection within the XY plane. Support plate 128 is driven by verticalmovement rotation driving section 127, so that the other end in thelongitudinal direction is rotationally driven in the θz direction withdrive shaft 126 serving as the rotation center between a first supportplate position opposing a part of the outer circumference section ofchuck unit 153 and a second support plate position which does not facechuck unit 153, and is also driven in predetermined strokes in thevertical direction. A suction pad 128 b is fixed to the upper surface ofsupport plate 128, near the other end. Suction pad 128 b is joined to avacuum device via a piping member which is not shown (the vacuum deviceand the piping member are each omitted in the drawings). Wafer W, whensupported from below by support plate 128 (suction pad 128 b), is vacuumchucked and held by suction pad 128 b. That is, a frictional forcebetween wafer W and suction pad 128 b limits movement of wafer W in theX-axis direction, the Y-axis direction, and the θz direction.Incidentally, the frictional force between wafer W and wafer supportmember 125 can be used, without suction pad 128 b being provided.

The first support plate position of each of the support plates 128 isset so that support plate 128 of one of wafer support members 125, whenat the first support plate position, faces the outer circumference edgein the five o'clock direction when viewed from the center of platemember 44 of chuck unit 153, and support plate 128 of the other wafersupport member 125, when at the first support date position, faces theouter circumference edge in the seven o'clock direction when viewed fromthe center of plate member 44 of chuck unit 153 (refer to FIG. 3). Tothe upper surface of each of the support plates 128, a reflection mirror128 a is fixed, on the drive shaft 126 side of suction pad 128 b.

A pair of measurement systems 123 a, 123 b, which employs a verticalillumination method where an illumination light can be irradiated fromabove to each of the reflection mirrors 128 a on each of the supportplates 128 when each of the pair of support plates 128 is at the firstsupport plate position, is provided near the pair of wafer supportmembers 125. Each of the pair of measurement systems 123 a, 123 b isjoined to mainframe BD, via a support member which is not shown.

Each of the pair of measurement systems 123 a, 123 b is an edge positiondetection system which employs an image processing method to detectposition information of the edge section of wafer W, the systemincluding an illumination light source, a plurality of optical pathbending members such as reflection mirrors, lenses or the like, imagingdevices such as CCDs and the like.

In carry-in unit 121, another reflection mirror 34 is further provided(refer to FIG. 3) at a position of a predetermined height facing theouter circumference edge in a six o'clock direction when viewed from thecenter of plate member 44 of chuck unit 153 (at a position which canface the notch of wafer W when wafer W is suctioned by chuck unit 153).A measurement system 123 c (refer to FIG. 6) is provided, which employsa vertical illumination method in which an illumination light can beirradiated from above with respect to reflection mirror 34. Measurementsystem 123 c is structured in a similar manner as measurement systems123 a, 123 b.

When edge detection of wafer W is performed by each of the threemeasurement systems 123 a to 123 c, imaging signals are to be sent to asignal processing system 116 (refer to FIG. 6).

Carry-in unit 121 is furthermore equipped with a wafer flatnessdetection system 147 (refer to FIG. 6), and a plurality of chuck unitposition detection systems 148 (refer to FIGS. 4 and 6).

Wafer flatness detection system 147 is structured by a plurality of, orin this case, four Z position detection systems 146 (refer to FIG. 4)which detects a position (Z position) in the Z-axis direction of thewafer W surface at a plurality of places of mainframe BD each placed at,for example, three places above wafer W near the outer circumferencesection, and one place above the wafer near the center section vicinity.In the present embodiment, as Z position detection system 146, aposition detection system employing a triangulation method which is atype of a so-called optical displacement meter is used, which receives areflected light of a measurement beam irradiated on a target object anddetects the position (the Z position in the present embodiment) of thetarget object. In the present embodiment, at each Z position detectionsystem 146, a measurement beam is irradiated on the wafer W uppersurface via through hole 152 (refer to FIG. 5) previously described, andreceives the reflected light via another through hole 152.

Measurement values of the plurality of Z position detection systems 146structuring wafer flatness detection system 147 are sent to maincontroller 20 (refer to FIG. 6). Main controller 20, based on themeasurement values of the plurality of Z position detection systems 146,detects the Z position at the plurality of places on the wafer W uppersurface, and obtains the flatness of wafer W from the detection results.

A plurality of (for example, three) chuck unit position detectionsystems 148 is fixed to mainframe BD. As each of the chuck unit positiondetection systems 148, a position detection system of a triangulationmethod similar to Z position detection system 146 is used. By the threechuck unit position detection systems 148, the Z position of theplurality of places on the upper surface of chuck unit 153 is detected,and the detection results are sent to main controller 20 (refer to FIG.6).

Although it is not shown in FIG. 1, above reticle R, a pair of reticlealignment system detection systems 14 (refer to FIG. 6) is placed, whichemploys a TTR (Through The Reticle) method using an exposure wavelengthto simultaneously observe a pair of reticle alignment marks on reticle Rand an image via projection optical system PL of the pair of the secondreference marks RM on measurement plate 30 on wafer table WTBcorresponding to the reticle alignment marks. Detection signals of thepair of reticle alignment system detection systems 14 are supplied tomain controller 20.

Other than this, in exposure apparatus 100, near projection opticalsystem PL, an irradiation system which irradiates a plurality ofmeasurement beams on the surface of wafer W via Lq of liquid immersionarea 36, and a multi-point focal point detection system 54 (refer toFIG. 6) (hereinafter referred to as a multi-point AF system) consistingof a light-receiving system which receives the reflection beams of eachmeasurement beam via liquid Lq are provided. As such a multi-point AFsystem 54, a multi-point focal point detection system having astructure, in which an irradiation system and a light-receiving systemeach include a prism and both use the tip lens of projection opticalsystem PL as their constituent element, as is disclosed in, for example,U.S. Patent Application Publication No. 2007/0064212, can be used.

FIG. 6 is a block diagram showing an input/output relation of maincontroller 20, which mainly structures a control system of exposureapparatus 100 and has overall control of each section. Main controller20 includes a workstation (or a microcomputer) or the like, and hasoverall control of each section structuring exposure apparatus 100.

In exposure apparatus 100 related to the present embodiment structuredin the manner described above, under the control of main controller 20,similarly to the exposure apparatus disclosed in, for example, U.S. Pat.No. 8,0544,472 and the like, a parallel processing operation isperformed using wafer stage WST and measurement stage MST. In exposureapparatus 100 of the present embodiment, on wafer W loaded (carry-in) onwafer stage WST as it will be described later on and held by wafer tableWTB, liquid immersion area 36 is formed using local liquid immersiondevice 8, and exposure operation of the wafer is performed usingillumination light IL, via projection optical system PL and liquid Lq ofliquid immersion area 36. This exposure operation is performed byrepeating a moving operation between shots, in which wafer stage WST ismoved to a scanning starting position (acceleration starting position)for exposure of each shot area on wafer W, and a scanning exposureoperation, in which the pattern of reticle R is transferred by thescanning exposure method onto each shot area, based on results of waferalignment (EGA) by alignment systems AL1, and AL2 ₁ to AL2 ₄ ofalignment system device 99, the latest base line of alignment systemAL1, and AL2 ₁ to AL2 ₄ and the like, performed in advance by the maincontroller. Further, on the parallel processing operation describedabove, the liquid immersion area is to be held on measurement stage MSTduring wafer exchange, and when wafer stage WST is placed right underprojection unit PU on the exchange with measurement stage, the liquidimmersion area on measurement stage MST is moved onto wafer stage WST.

However, in the present embodiment, different from the exposureapparatus disclosed in, U.S. Pat. No. 8,054,472 described above,position information of wafer stage WST and position information ofmeasurement stage MST are measured using each interferometer ofinterferometer system 70, during the parallel processing operation usingwafer stage WST and measurement stage MST. Further, reticle alignment isperformed, using the pair of reticle alignment system detection systems14 (refer to FIG. 6), measurement plate 30 on wafer stage WST (refer toFIG. 2A), and the like. Furthermore, control in the Z-axis direction ofwafer table WTB during exposure is performed in a real-time manner usingmulti-point AF system 54 previously described.

Incidentally, as is with the exposure apparatus disclosed in, U.S. Pat.No. 8,054,472 described above, a multi-point AF system consisting of anirradiation system and a light-receiving system can be placed in betweenalignment system device 99 and projection unit PU, instead ofmulti-point AF system 54. And, the Z position of the entire surface ofwafer W can be acquired using the multi-point AF system while waferstage WST is moving on wafer alignment, and position control the Z-axisdirection of wafer stage WST during exposure can be performed, based onthe Z position of the entire surface of wafer W acquired during thealignment. In this case, another measurement device has to be providedfor measuring the Z position of the wafer table WTB upper surface onwafer alignment and on exposure.

Next, a procedure for loading wafer W will be described based on FIGS.7A to 9B. Incidentally, in FIGS. 7A to 9B, to simplify the drawings andto prevent complication of the drawings, wafer stage WST, wafer flatnessdetection system 147 and chuck unit position detection system 148 andthe like are omitted, except for mainframe BD, vertical movement pin 140and the like.

As a premise, for example, chuck unit 153, as is shown in FIG. 7A, ismoved near a movement upper limit position (movement limit position atthe +Z side) within the stroke range by the pair of Z voice coil motors144, or in other words, moved to the first position previouslydescribed, and is maintained at the position. Further, at this point,the pair of wafer support members 125 is to have each of their supportplates 128 set to the second support plate position by main controller20.

In this state, first of all, carry-in of wafer W to an area below chuckunit 153 is performed, in a state where wafer W is supported from belowby carrier arm 149. Here carry-in of wafer W to loading position LP bycarrier arm 149 can be performed when exposure processing on a previouswafer subject to exposure (hereinafter called a previous wafer) is beingperformed on wafer stage WST, or when alignment processing or the likeis being performed.

Next, as is shown in FIG. 7B, main controller 20 begins to supply fluid(air) to the plurality of chuck members 124, and then by driving carrierarm 149 slightly upward (or by driving chuck unit 153 slightlydownward), wafer W is suctioned by chuck unit 153 (chuck member 124) ina non-contact manner while maintaining a predetermined distance (gap).Incidentally, in FIG. 7E, to simplify the description, wafer W is to besuctioned by chuck unit 153 by a flow of air blow out indicated byblackened dots in the drawing (to be more precise, by a negativepressure caused by the flow). The same applies to each drawing in FIGS.7C to 9A. However, the state of the air actually blown out is notnecessarily limited to this.

Next, main controller 20 drives (rotates) support plates 128 of the pairof wafer support members 125 so as to position each support plate at itsfirst support plate position, via vertical movement rotation drivingsection 127. On this operation, as is shown FIG. 7C, by verticalmovement rotation driving section 127 of the pair of wafer supportmembers 125, suction pads 128 b on the upper surface of each of thesupport plates 128 are moved to positions facing the lower surface (rearsurface) of wafer W. Further, in the state where the support plates 128of the pair of wafer support member 125 are positioned at each of theirfirst support plate positions, reflection mirrors 128 a are each facingpredetermined positions at the outer circumference edge on the rearsurface of wafer W. Further, at the notch position on the rear surfaceof wafer W, another reflection mirror 34 faces the notch position at thestage when wafer W is suctioned by chuck unit 153.

When suction pads 128 b on the upper surface of each of the supportplates 128 face wafer W, main controller 20, as is shown in FIG. 7D,controls vertical movement rotation driving section 127 so as to drivesupport plate 128 upward. And when suction pads 128 b on the uppersurface of each of the support plates 128 and the lower surface of waferW come into contact, main controller 20 begins vacuum suction by thepair of suction pads 128 b, and supports the lower surface of wafer W bysuction by each of the suction pads 128 b. On this operation, movementof wafer W is restricted in directions of three degrees of freedom,which are the direction, the θx directions, and the θy direction, by thesuction from above by chuck unit 153, as well as in directions of threedegrees of freedom, which are the X direction, the Y direction and theθz direction, by the suction support from below by the pair of supportplates 128, which in turn restricts the movement in directions of sixdegrees of freedom.

The processing sequence of exposure apparatus 100 is decided so thatwafer W waits above loading position LP in this state, that is, in astate where suction hold (support) is performed by chuck unit 153 andthe pair of wafer support members 125. In exposure apparatus 100, whilewafer W waits at loading position LP, exposure processing (and alignmentprocessing prior to the exposure processing) or the like to the previouswafer held on wafer table WTB is performed. Further, on this operation,vacuum suction of wafer W by carrier arm 149 can be moved to a statewhere the suction is stopped.

Then, while wafer W is waiting above loading position LP, as is shown inFIG. 8A, the three measurement systems 123 a to 123 c (measurementsystem 123 c is not shown. Refer to FIG. 6) each performs edge detectionof wafer W. Imaging signals of the imaging elements that the threemeasurement systems 123 a to 123 c have are sent to signal processingsystem 116 (refer to FIG. 6). Signal processing system 116, by themethod disclosed in, for example, U.S. Pat. No. 6,624,433 and the like,detects position information of the wafer, of the three places at thecircumferential section including the notch, and obtains positionaldeviation in the X-axis direction and the Y-axis direction androtational (θz rotation) error of wafer W. Then, information on thepositional deviation and the rotation error is supplied to maincontroller 20 (refer to FIG. 6).

Around the beginning of the edge detection of wafer W described above,main controller 20 drives carrier arm 149 downward so as to separatecarrier arm 149 and wafer W, and then makes carrier arm 149 withdrawfrom loading posit on LP.

When exposure processing of the previous wafer is completed, and theprevious wafer is unloaded from wafer table WTB by the carry-out devicewhich is not shown, by main controller 20, wafer stage WST is moved to aposition below (loading position LP) chuck unit 153, via coarse movementstage driving system 51A. Then, as is shown in FIG. 8B, main controller20 drives center support member 150 having the three vertical movementpins 140 upward, via driver 142. The edge detection of wafer W by thethree measurement systems 123 a to 123 c is still being continued atthis point of time, and main controller 20 finely drives wafer stage WSTby the same amount in the same direction as the deviation amount (error)of wafer W, so that wafer W is mounted on a predetermined n on waferstage WST, based on positional deviation and rotation error informationof wafer W.

Then, when the upper surface of the three vertical movement pins 140comes into contact with the lower surface of wafer W suctioned by chuckunit 153, main controller 20 stops the upward drive of center supportmember 150. This allows wafer W to be held by suction by the threevertical movement pins 140 in a state where the positional deviation andthe rotation errors are corrected.

Here, the Z position of wafer W suctioned by chuck unit 153 at thewaiting position can be accurately determined to some extent.Accordingly, driving center support member 150 from the referenceposition by a predetermined amount, main controller 20 can make thethree vertical movement pins 140 come into contact with the lowersurface of wafer W auctioned by chuck unit 153, based on measurementresults of displacement sensor 145. However, the arrangement is notlimited to this, and an arrangement can be set in advance so that thethree vertical movement pins 140 come into contact with the lowersurface of wafer W suctioned by chuck unit 153 at the upper limit of themovement position of center support member 150 (the three verticalmovement pins 140).

Then, main controller 20 operates a vacuum pump which is not shown, andbegins vacuum suction to the wafer W lower surface by the three verticalmovement pins 140. Incidentally, the suction of wafer W by chuck member124 is being continued even in this state. By the suction by chuckmember 124 and the frictional force due to the support from below of thethree vertical movement pins 140, the movement of wafer W is restrictedin directions of six degrees of freedom. Accordingly, no problems occureven when the suction hold of wafer W by support plate 128 of wafersupport member 125 is released in this state.

So, when wafer W is supported (held by suction) the three verticalmovement pins 140, main controller 20 separates support plates 128 ofthe pair of wafer support members 125 from wafer W by driving thesupport plates downward, after finishing vacuum suction by the pair ofsuction pads 128 b, as is shown in FIG. 8C. Then, each of the supportplates 128 is set to the second support plate position, via verticalmovement rotation driving section 127.

Next, as is shown in FIG. 8D, main controller 20 drives each of thechuck units 153 and the three vertical movement pins 140 (center supportmember 150) downward that suctions and support wafer W, via the pair ofZ voice coil motors 144 and driver 142. By this operation, a downwarddrive of chuck unit 153 and the three vertical movement pins 140 (centersupport member 150) begins, while the suction state by chuck unit 153(chuck member 124) and the support state by the three vertical movementpins 140 with respect to wafer W are maintained. Here, the drive ofchuck unit 153 is performed by main controller 20 driving the pair of Zvoice coil motors 144, based on detection results of the plurality ofchuck unit position detection systems 148.

The drive of chuck unit 153 with the three vertical movement pins 140(center support member 150) described above is performed until the lowersurface (rear surface) of wafer W comes into contact with a planar wafermounting surface 41 of wafer table WTB (refer to FIG. 9A). Here,although wafer mounting surface 41 is actually a virtual flat surface(area) formed by upper end surfaces of multiple pins that the pin chuckprovided on wafer table WTB is equipped with, in FIG. 9A and the like,the upper surface of wafer table WTB is indicated as wafer mountingsurface 41.

Before starting the downward drive and during the downward drive ofchuck unit 153 with the three vertical movement pins 140 (center supportmember 150) described above, main controller 20 measures the flatness ofthe wafer W upper surface, via wafer flatness detection system 147 (aplurality of position detection systems 146 (refer to FIG. 4)). And, ofchuck unit 153 and center support member 150, main controller 20controls the downward speed of one of the members this case, centersupport member 150) superior in responsiveness with respect to thedownward speed of the other member (in this case, chuck unit 153), basedon the measurement results of wafer flatness detection system 147, sothat the flatness of wafer W falls within a desired range.

That is, for example, in the case it is detected by wafer flatnessdetection system 147 that wafer W is deformed in a shape protrudingdownward (a shape in which the inner circumference section is recessedthan the outer circumference section), main controller 20 deceases thedownward speed of center support member 150 so that it becomes slowerthan the driving speed of chuck unit 153, via driver 142. When thedownward speed of center support member 150 is made slower than thedriving speed of chuck unit 153, the center of the lower surface ofwafer W is substantially pushed from below by the three verticalmovement pins 140. Then, when the flatness of wafer W becomes apredetermined value, main controller 20 further drives center supportmember 150 and chuck unit 153 downward at the same speed(synchronously). In this case, the flatness of wafer W “becomes apredetermined value” means that, for example, wafer W is not completelyflat and although the inner circumference section is recessed whencompared to the outer circumference section, the shape of the wafer isdeformed so that the recess level becomes equal to or less than a leveldetermined in advance.

Further, for example, in the case it is detected by wafer flatnessdetection system 147 that wafer W is deformed in shape protruding upward(a shape in which the inner circumference section is protruding upwardthan the outer circumference section), main controller 20 increases thedownward speed of center support member 150 so that it becomes fasterthan the driving speed of chuck unit 153, via driver 142. When thedownward speed of center support member 150 is made faster than thedriving speed of chuck unit 153, the center of the lower surface ofwafer W is substantially pulled downward since the wafer is held bysuction by the three vertical movement pins 140. Then, when the flatnessof wafer W becomes the predetermined value described above chuck unit153, main controller 20 drives center support member 150 and chuck unitfurther downward at the same speed (synchronously).

Incidentally, in the present embodiment, while the position in the Zdirection of wafer W is detected at a plurality of points of wafer W,and information related to the shape (flatness) of wafer W is obtainedfrom the information related to these positions, other methods can alsobe used. For example, an image of wafer W can be picked up by a cameraor the like, and the information related to the shape (flatness) ofwafer W can be obtained from the image information which has beenobtained.

In the present embodiment, main controller 20 constantly measures thedeformation state (flatness) of wafer W using wafer flatness detectionsystem 147, from the state in which wafer W is suctioned by chuck unit153 from an upward direction and is also supported from below byvertical movement pins 140 to the state in which wafer W is held bysuction on the wafer holder which is not shown. Therefore, even in thecase excessive flatness correction was performed, such as when, forexample, wafer W located between chuck unit 153 and the three verticalmovement pins 140 has a shape protruding downward and the descendingspeed of vertical movement pins 140 was made slower than the descendingspeed of chuck unit 153 so as to adjust the flatness, and as aconsequence, wafer W became a shape protruding upward, by increasing thedescending speed of vertical movement pins 140 with respect to thedescending speed of chuck unit 153, the flatness of wafer W can beadjusted again to a predetermined value. However, measurement of thedeformation state (flatness) of wafer W can also be performed onlyduring a part of a time interval, the interval being from a state wherewafer W is suctioned from an upward direction by chuck unit 153 and isalso supported from a downward direction by vertical movement pins 140until wafer W is held by suction on the wafer holder which is not shown(for example, just before coming into contact with wafer mountingsurface 41).

Then, when the lower surface of wafer W comes into contact with thewafer table WTB upper surface (wafer mounting surface 41) as is shown inFIG. 9A, main controller 20 stops the high-pressure airflow flowing outfrom all of the chuck members 124, via adjustment device 115, cancelsthe suction of wafer W by all of the chuck units 153, and begins theadsorption (suction) of wafer W by the wafer holder which is not shownon wafer table WTB.

Next, as is shown in FIG. 9B, main controller 20 moves chuck unit 153upward to a predetermined waiting position (the first position or aposition near the first position), via the pair of Z voice coil motors144. This completes the loading (carry-in) of wafer W onto wafer tableWTB.

Here, when chuck unit 153 is driven upward and stopped (or during theupward drive), main controller 20 performs detection of edge position ofwafer W, using the three measurement systems 123 a to 123 c previouslydescribed. In this case, edge detection of wafer W is performed bymeasurement beams from measurement systems 123 a, 123 b, 123 c beingirradiated on the three reflection mirrors 86 on wafer table WTB, andreflection beams from the reflection mirrors 86 being received by theimaging elements of measurement system 123 a, 123 b, 123 c, imagingsignals of the imaging elements that the three measurement systems 123 ato 123 c have are sent to signal processing system 116 (refer to FIG.6), and information on positional deviation and rotation errors of waferW is supplied to main controller 20. Main controller 20 stores theinformation on positional deviation and rotation errors in a memory asan offset amount, and on wafer alignment, on exposure or the like to bedescribed later on, controls the position of wafer table WTB, takinginto account the offset amount described above. Incidentally, becausewafer W is mounted on wafer table WTB after being supported by the threevertical movement pins 140, in a state where edge detection of wafer Wis performed during the waiting previously described, and positionaldeviation and rotation errors obtained as a result are corrected, edgedetection of wafer W after wafer W being loaded on wafer table WTB doesnot necessary have to be performed.

As is described so far, according to carrier system 120 related to thepresent embodiment exposure apparatus 100 equipped with the system, onloading wafer W onto wafer table WTB, main controller 20 canindependently and vertically move chuck unit 153 which suctions wafer Wfrom above and vertical movement pins 140 (center support member 150)which support wafer W from below. That is, on making wafer W, in whichflexure, distortion or the like has occurred, move downward for waferstage WST to hold by suction, wafer W can be loaded on wafer stage WSTin a state where the flatness of wafer W is maintained to a value withina desired range, by controlling the descending speed of center supportmember 150 (the three vertical movement pins 140).

Further, in the present embodiment, while a structure was employed wherethree vertical movement pins 140 (center support member 150), which werestructured to vertically move in an integral manner, were used, thestructure is not limited to this. For example, center support member 150can be structured so that the three vertical movement pins movevertically in an independent manner, and the flatness of wafer W can bemade to fall within a desired range by making the three verticalmovement pins move vertically in an independent manner, based onmeasurement results of the flatness of the wafer. Incidentally, thenumber of vertical movement pins is not limited to three, and the pinscan be equal to, less than or more than three.

Further, in carry-in unit 121 which structures a part of carrier system120 related to the present embodiment, because the self-weight of chuckunit 153 is supported by the pair of weight-cancelling devices 131, theforce when driving chuck unit 153 in the vertical direction can bereduced, and the size of the pair of Z voice coil motors 144 can bereduced.

Further, in carrier system 120 related to the present embodiment, duringthe loading of wafer W onto wafer stage WST, main controller 20 measurespositional deviation and rotation deviation of wafer W via measurementsystems 123 a to 123 c, and based on the measurement results, waferstage WST is driven so that positional deviation and rotationaldeviation of wafer W are corrected. Accordingly, wafer W can be loadedon wafer table WTB with good positional reproducibility.

Further, according to exposure apparatus 100 related to the presentembodiment, because exposure to wafer W loaded on wafer table WTB in astate of high flatness and with good positional reproducibility isperformed in a step-and-scan method, to each of a plurality of shotareas on wafer W, exposure with good overlay accuracy and withoutdefocus becomes possible, the pattern of reticle R can be transferred onthe plurality of shot areas in a favorable manner.

Incidentally, in the embodiment above, considering the point that thethree vertical movement pins 140 (center support member 150) aresuperior to chuck unit 153 in responsiveness at the time of driving,driver 142 was driven so as to adjust the descending speed of the threevertical movement pins 140 (center support member 150) to make theflatness of wafer W become a value within a desired range, when wafer Wis loaded on wafer stage WST. However, on the contrary, in the casechuck unit 153 is superior to the three vertical movement pins 140(center support member 150) in responsiveness at the time of driving, itis desirable to adjust the descending speed of chuck unit 153. In thecase responsiveness at the time of driving is about the same in thethree vertical movement pins 140 (center support member 150) and chuckunit 153, the descending speed of one of center support member 150 andchuck unit 153, or both center support member 150 and chuck unit 153 canbe adjusted. Further, since the flatness of the wafer only has to bemaintained at a predetermined level, the descending speed of one ofcenter support member 150 and chuck unit 153, or both center supportmember 150 and chuck unit 153 can be adjusted, regardless of thesuperiority of responsiveness.

Further, in the embodiment above, while the case has been describedwhere wafer flatness detection system 147 was structured by theplurality of Z position detection systems 146, the embodiment is notlimited to this, and the wafer flatness detection system can bestructured using a detection device that irradiates light on the entireupper surface of the wafer and can detect the surface shape. Further, inthe case the wafer flatness detection system is structured by theplurality of Z position detection systems similarly to the embodimentdescribed above, as the Z position detection system, the positiondetection system which employs a triangulation method does notnecessarily have to be used. That is, since the wafer flatness detectionsystem only has to be able to detect the flatness (the Z position of aplurality of places) of wafer W, for example, as is shown in FIG. 10,instead of Z position detection system 146 previously described, aplurality of capacitance sensors 84 can be placed at the lower surfaceof chuck unit 153. Because a sensor having a size smaller than Zposition detection system 146 can be used for capacitance sensor 84,capacitance sensor 84 can be placed at places more than the total offour places where the measurement points of the plurality of Z positiondetection systems 146 were placed, which are, for example, three placesat the outer circumference section and one place at the center.

Further, because the chuck unit position detection system only has tomeasure the Z position of chuck unit 153, the system is not limited to aposition detection system of the triangulation method, and as is shownin FIG. 10, for example, the chuck unit position detection system can bestructured using an encoder system made up of an encoder head 97 and ascale 98. Or, for example, in at least one of the pair of Z voice coilmotors 144, an encoder can be provided, in which the encoder measuresthe displacement amount in the Z-axis direction from a reference pointof a mover corresponding to its stator, and the chuck unit positiondetection system can be structured by the encoder. Further, chuck unitposition detection system 148 can be structured using the capacitancesensor.

Incidentally, in the embodiment described above, just before wafer W isloaded onto wafer table WTB, gas can be blown out from chuck member 124toward wafer W at a blowout velocity faster than the blowout velocity sofar when wafer W was being suctioned. By this operation, as is shown inFIG. 11, the pressure between wafer W and chuck member 124 increases,and the outer circumference section of wafer W vibrates (a so-calledpneumatic hammer phenomenon occurs). When wafer W is moved furtherdownward in a state where this vibration is occurring, wafer W ismounted on wafer table WTB in a state where a contact area between theouter circumference section at the lower surface of wafer W and thewafer holder upper surface which is not shown is small. That is, becausethe frictional force between the wafer W lower surface and the waferholder which is not shown is reduced, on suction hold of wafer W by thewafer holder which is not shown, wafer W is mounted on wafer table WTBin a state where generation of distortion caused by adsorption issuppressed.

Incidentally, in the embodiment described above, while wafer W ismounted on wafer mounting surface 41 of wafer table WTB by chuck unit153 performing suction of wafer W from above, and chuck unit 153 and thethree vertical movement pins 140 being driven downward in a state wherethe three vertical movement pins 140 perform vacuum suction of the rearsurface of wafer W, the structure is not limited to this. For example,instead of the three vertical movement pins 140, a structure that usescarrier arm 149 can be employed. In this case, carrier arm 149 is tohave a structure drivable within a predetermined range also in thevertical direction, in addition to the horizontal direction. And, in astate where vacuum suction of the rear surface of wafer W is performedby carrier arm 149, the wafer W surface is suctioned by chuck unit 153,and main controller 20 sets each of the downward speed of chuck unit 153and carrier arm 149 to a predetermined value, using the detectionresults of wafer flatness detection system 147.

Incidentally, it is preferable to form a groove in wafer mountingsurface 41 so as to fit carrier arm 149 therein so that carrier arm 149does not interfere with wafer W when wafer W is mounted on wafermounting surface 41, and that wafer W and wafer mounting surface 41 cancome into contact with good precision. Then, carrier arm 149 can be madeto move in the horizontal direction inside the groove, so that it can bewithdrawn from wafer mounting surface 41.

Further, as another structure, wafer W can be mounted on wafer mountingsurface 41 of wafer table WTB without using the three vertical movementpins 140, after wafer W is delivered to chuck unit 153 from carrier arm149. In this case, for example, main controller 20 can control thedescending speed of chuck unit 153, the flow velocity (flow amount) ofthe fluid blowing out from chuck member 124, and the direction of thefluid flowing, using the detection results of wafer flatness detectionsystem 147 to preferably set each of the suction forces of chuck unit153 to a predetermined value. On this operation, in the case the rearsurface of wafer W is supported by suction using suction pad 125 b ofwafer support member 125, similarly to the case of carrier arm 149previously described, a cutout into which wafer support member 125 fitsis preferably formed in wafer mounting surface 41, so that wafer W andmounting surface 41 can come into contact with good precision. Further,in the case movement of wafer W in the lateral direction (a directionparallel to the mounting surface) does not have to be restricted, astructure can be employed in which wafer W is held by suction only bychuck member 124 without wafer support member 125 being provided, andwafer W is mounted on wafer mounting surface 41 of wafer table WTB. Alsoon this operation, for example, main controller 20 can control thedescending speed of chuck unit 153, the flow velocity (flow amount) ofthe fluid blowing out from chuck member 124 and the direction of thefluid flowing, using the detection results of wafer flatness detectionsystem 147 to preferably set each of the suction forces of chuck unit153 to a predetermined value.

Incidentally, in the embodiment described above, as an example, whileliquid immersion exposure apparatus was described in which a liquidimmersion space including an optical path of the illumination light wasformed between the projection optical system and the wafer, and thewafer was exposed with the illumination light via the liquid between theprojection optical system and the liquid immersion space, the embodimentis not limited to this, and the embodiment described above can beapplied to a dry-type exposure apparatus which performs exposure ofwafer W without the illumination light passing through the liquid(water).

Further, in the embodiment described above and its modified example(hereinafter referred to as the embodiment described above and thelike), while the case has been described where the exposure apparatus isa scanning type exposure apparatus of the step-and-scan method or thelike, the embodiment is not limited to this, and the embodimentdescribed above can also be applied to a stationary type exposureapparatus such as a stepper. Further, the embodiment described above andthe like can also be applied to a reduction projection exposureapparatus of the step-and-stitch method in which a shot area and a shotarea are synthesized, an exposure apparatus of the proximity method, amirror projection aligner or the like. Furthermore, the embodimentdescribed above and the like can also be applied to a multi-stage typeexposure apparatus equipped with a plurality of wafer stages, as isdisclosed in, for example, U.S. Pat. Nos. 6,590,634, 5,969,441,6,208,407 or the like.

Further, the projection optical system in the exposure apparatus of theembodiment described above and the like is not limited to a reductionsystem, and can either be an equal-magnifying or a magnifying system,and projection optical system PL is not limited to a refractive system,and can either be a reflection system or a catadioptric system, and itsprojection image can either be an inverted image or an erect image.Further, while the shape of the illumination area and the exposure areapreviously described was a rectangular shape, the embodiments are notlimited to this, and for example, the shape can be an arc, a trapezoid,a parallelogram or the like.

Further, the light source of the exposure apparatus related to theembodiment described above and the like is not limited to the ArFexcimer laser, and a pulse laser light source such as a KrF excimerlaser (output wavelength 248 nm) an F₂ laser (output wavelength 157 nm),an Ar₂ laser (output wavelength 126 nm), or a Kr₂ laser(outputwavelength 146 nm), a super high pressure mercury lamp which generates abright line such as a g-line (wavelength 436 nm), an i-line (wavelength365 nm), or the like can also be used. Further, a harmonic wavegenerating device which uses a YAG laser can also be used. As otherlight sources, as is disclosed in, for example, U.S. Pat. No. 7,023,610,a harmonic wave can also be used as vacuum ultraviolet light, in which asingle-wavelength laser beam in the infrared range or the visible rangeemitted by a DFB semiconductor laser or a fiber laser is amplified by afiber amplifier doped with, for example, erbium (or both erbium andytterbium) and wavelength conversion into ultraviolet light is performedusing a nonlinear optical crystal.

Further, in the embodiment described above and the like, as illuminationlight IL of the exposure apparatus, the light is not limited to lighthaving a wavelength of 100 nm or more, and as a matter of course, lighthaving a wavelength less than 100 nm can also be used. For example, theembodiment described above and the like can suitably be applied to anEUV exposure apparatus which uses EUV (Extreme Ultraviolet) light in thesoft X-ray region (for example, a wavelength region of 5 to 15 nm).Other than this, the embodiment described above and the like can also beapplied to an exposure apparatus which uses a charged particle beam suchas an electron beam or an ion beam.

Furthermore, the embodiment described above and the like can also beapplied to an exposure apparatus which synthesizes two reticle patternson a wafer via the projection optical system and performs doubleexposure almost simultaneously on a shot area on the wafer by performingscanning exposure once, as is disclosed in, for example, U.S. Pat. No.6,611,316.

Further, the object on which the pattern should be formed (the objectsubject to exposure on which the energy beam is irradiated) in theembodiment described above and the like is not limited to the wafer, andmay be other objects such as a glass plate, a ceramic substrate, a filmmember, or a mask blank.

The usage of the exposure apparatus is not limited to the exposureapparatus for manufacturing semiconductors, and the embodiments abovecan be widely applied, for example, to an exposure apparatus for liquidcrystals that transfers a liquid crystal display devices pattern onto asquare-shaped glass plate, an exposure apparatus for manufacturing anorganic EL, a thin film magnetic head, an imaging element (such as aCCD), a micromachine and a DNA chip or the like. Further, the embodimentdescribed above and the like can also be applied to an exposureapparatus that transfers a circuit pattern onto a glass substrate or asilicon wafer for manufacturing a reticle or a mask that is used in notonly microdevices such as semiconductor devices, but also used in anoptical exposure apparatus, an EUV exposure apparatus, an X-ray exposureapparatus, an electron beam exposure apparatus or the like.

Electronic devices such as semiconductor devices are manufacturedthrough the steps such as; a step for performing function/performancedesign of a device, a step for making a reticle based on this designstep, a step for making a wafer from a silicon material, a lithographystep for transferring a pattern of a mask (reticle) onto the wafer bythe exposure apparatus (pattern generating device) and the exposuremethod related to the embodiment described above and the like, adevelopment step for developing the wafer which has been exposed, anetching step for removing by the etching an exposed member of an areaother than the area where the resist remains, a resist removing step forremoving the resist that is no longer necessary since etching has beencompleted, a device assembly step (including a dicing process, a bondingprocess, and a package process), and an inspection step. In this case,in the lithography step, because the device pattern is formed on thewafer, using the exposure apparatus of the embodiment described aboveand the like and performing the exposure method previously described, ahighly integrated device can be manufactured with good productivity.

Incidentally, the disclosures of all publications, PCT InternationalPublications, U.S. Patent Application Publications and U.S. patentsrelated to exposure apparatuses and the like that are cited in thedescription so far are each incorporated herein by reference.

The invention claimed is:
 1. A suction device which suctions aplate-like object, the suction device comprising: a suction memberhaving an opposing section which opposes an upper surface of the objectfrom above the object, the suction member generating a suction forcewith respect to the object by blowing out gas from the opposing sectiononto the upper surface of the object, the suction force supporting theobject from above the object without the suction member contacting theupper surface of the object; and a measurement device located above theobject, which obtains information related to a shape of the uppersurface of the object suctioned by the suction member.
 2. The suctiondevice according to claim 1, wherein the suction member makes thesuction force act on the upper surface of the object, and themeasurement device obtains information related to a surface shape of theupper surface of the object.
 3. The suction device according to claim 2,wherein the measurement device measures a spacing between the uppersurface of the object and the opposing section of the suction memberopposing the upper surface.
 4. The suction device according to claim 3,wherein the measurement device includes a capacitance sensor.
 5. Thesuction device according to claim 2, wherein the measurement device hasa plurality of sensors which obtain information for each of a pluralityof places of the upper surface of the object, related to a position in adirection intersecting the upper surface.
 6. The suction deviceaccording to claim 1, further comprising: a controller which controls aflow of the gas using the information obtained by the measurementdevice.
 7. The suction device according to claim 6, wherein thecontroller controls the flow of the gas so as to make the shape of theupper surface of the object into a predetermined state.
 8. A suctiondevice which makes a suction force act on a plate-like object in anon-contact manner, the suction device comprising: a base member; aplurality of suction sections provided at the base member, each of thesuction sections generating a flow of a gas along an upper surface ofthe object so as to generate the suction force with respect to theobject, the suction force supporting the object from above the objectwithout the suction sections contacting the upper surface of the object;and an adjustment device which deforms the upper surface of the object,wherein the upper surface of the object is deformed by the adjustmentdevice, while the object is being suctioned by the suction forcegenerated by the flow of the gas which the plurality of suction sectionsgenerated.
 9. The suction device according to claim 8, wherein theadjustment device includes a gas supply device which supplies the gas tothe plurality of suction sections, and a controller which controls thegas supply device, wherein the controller can control a state of the gasblowing out from each of the plurality of suction sections.
 10. Thesuction device according to claim 8, wherein the adjustment deviceincludes a gas supply device which supplies the gas to the plurality ofsuction sections, wherein groups are made of the plurality of suctionsections, and the gas supply device can control the gas blowing out fromthe suction section for each of the groups.